Punjab University 2008 B.E Information Technology UNIVERSITY S - Question Paper
B.E IT third SEMESTER
DIGITAL ELECTRONICS
SUb* Code i 2961
2118
B* s* (I* T) 3rd semester IT-315 Digital Electronics Time Allowed:3 Hours Max*Marks; 100
Note* Attempt any five questions, selecting atleast two questions from each Part a and Part-B*
L L -L i.
TTTTT
I (a) 3xpress the following nos, in decimal:
(10110#01G1>2 , <l6.Sji6 and (26*24)8*
The solution to the quadratic aquation y?~*llx.+22Q is x=3 and 3c6* Wlmt is the base of the numbers?
(c) Convert the hedecimal no* 68BE to binary and then binary, convert it to actual#
(d) Represent decimal no#6027 in (i)B<2> (ii)Excess ~3 code (iii) 2421 code* (6,4,4,6)
(a) Define positive and Negative logic* Represent universal gates with help of it How is De-Morgan* s theorem related to it? Also convert NAND to SX-OR ' gate using minimum no* of gates*
(b) Inclement F(a,B,C,D) (1,3,4,11,12,13,14) using a 8sl MUX*
(c) Design a BCD-to-7*segment decoder* (6,6,8)
III (a) using 10*3 complement, subtract 3250-72532*
(b) siirlify using Boolean algebra only:~
K=X?2H-5d?Z+W X+WCC+WX*
Also obtain truth table and draw logic diagram using sin$>lified egression* (8,12)
IV (a) Design a counter with the following repeated binary
sequence: 0,1,2,3,4,5*6* Use THK flipflops*
(b) What is the difference between serial & parallel transfer? Explain how to convert serial data ,to parallel and parallel data to serial, what type of register is needed? (10,10)
P* T*C*
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parx-b
V (a) Design a combinational circuit using a RDM* The
tkt* accepta a 3-bit number and generates an output binary no* equal to the square of the irput number
(b) Draw and explain the circuit diagram for a 16-bit
RDM array using diode matrix coufig** (10* 10)
vi The following are the specifications for the schottky TTL 74500 quadrap 1 <3 two~ir>ut NAJSD pates* CHlcUlate the fan ,-oufc, power dissipationpropagation delay and noise margin of the schottky NAND gate*
Parameter |
Name |
v&lue |
vcc |
Supply voltage |
5V |
JCCH |
High-level supply current |
10mA |
JCCL |
Lowlvel supply current |
20mA |
VeK |
High-level o/p voltage (min) |
2* 7V |
V0L |
Low-level o/p voltage (max) |
0,5V |
Yin |
High-level l/P voltage (min) |
2V |
vil |
I/P voltage (max) |
0*8V |
High-level o/p current (max) | ||
, i.' %QL |
Low-level o/p current (max) |
20mA |
High-level I/P Current (max) |
0* 05mA | |
lj:1L |
Low-level I/P current (max) |
2ha |
t'P-LH __L |
Low-to-high delay |
3ns |
"T |
High-to-iow delay |
3ns |
<b) E3q>lain with the aid of a circuit diagram. |
the operation |
of a standard TTL 3-input NAND gate* What is the function of diode in the path of otempole output stage? (8,12)
VII (a) Host DAC#s are of either the Binary weighted resistor,
or the R-2R type* What are the disadvantages of the former and when might it be employed?
(b) What are the various processes, followed in an ordered sequence for converting an analog signal to a digital form? How can quantization error be reduced? (10,10)
VIII Write short notes on the following* -
(a) Tristate Logic
(b) Slash type ADC
CCj CM0s Inverter*
Cd) Reading operate
Attachment: |
Earning: Approval pending. |