B.E-B.E Electronics and Tele-Communication Engineering Microwave Engineering(Meenakshi University, Chennai-2010)
Friday, 23 August 2013 03:21Duraimani
(Established under section 3 of UGC Act,1956)
Course & Branch :B.E - ETCE
Title of the Paper :Microwave Engineering Max. Marks :80
Sub. Code :525603/6C0099 Time : 3 Hours
Date :27/04/2010 Session :FN
PART - A (10 x 2 = 20)
Answer ALL the Questions
1. State any two properties of S matrix.
2. What is Magic T?
3. Define Directivity of a Directional coupler.
4. What is Gyrator?
5. What is the feature of slow wave structures?
6. Define Velocity modulation.
7. Define Transferred electron effect.
8. Name any two physical structures of microwave transistors.
9. Define insertion loss.
10. Name any two elements used for low power measurement.
PART – B (5 x 12 = 60)
Answer ALL the Questions
11. (a) Explain the S matrix formulation of N port network.
(b) Compare S, Z and Y matrices.
(or)
12. Explain in detail the working principle of E plane and H plane Tees with neat diagrams.
13. Explain the different types of Directional coupler and their characteristics.
(or)
14. Describe the operation of (a) Microwave isolator and (b) Rotary attenuator with cross sectional sketches.
15. Explain in detail the working principle of two cavity klystron amplifier and derive the expression for velocity modulation.
(or)
16. Explain the constructional details of cylindrical magnetron and p mode of oscillations.
17. With an equivalent circuit, explain the operation of a parametric amplifier and derive Manley Rowe Power relations.
(or)
18. Explain in detail the basic principle of operation of IMPATT diode and its VI characteristics.
19. With a suitable microwave bench setup, explain in detail the measurement of Impedance of the given load.
(or)
20. Describe the different methods of low, medium and high power measurements, with neat diagrams.
| Earning: ₹ 0.20/- |
