How To Exam?

a knowledge trading engine...


M.Tech-M.Tech Nanotechnology VLSI Technology (Sathyabama University, Chennai, Tamil Nadu-2012)

Monday, 19 August 2013 06:58Duraimani
SATHYABAMA UNIVERSITY
(Established under section 3 of UGC Act,1956)
Course & Branch :M.Tech - NANO/VLSI/W-VLSI
Title of the Paper :VLSI Technology                             Max. Marks:80
Sub. Code :782105 (2008-2009-2010-2011)                  Time : 3 Hours
Date :24/05/2012                                                            Session :FN
                                       PART - A                                 (6 x 5 = 30)
                        Answer ALL the Questions
1.     Explain the different Silicon shaping techniques.
2.     A Boron-doped crystal is measured at its seed end with a four point probe of spacing 1mm. The (V/I) reading is 10 ohms. What is the seed end doping and the expected reading at 0.95 fractions solidified.
3.     Explain two techniques for transferring resist features into a layer.
4.     Define Fick’s one dimensional Diffusion Equations and elaborate on the related parameters.
5.     List the possible Metallization choices for integrated circuits.
6.     Explain the procedural steps for Die interconnection and Die bonding.

PART – B               (5 x 10 = 50)
Answer ALL the Questions
7.     With a schematic representation of a crystal grower, explain the Czochralski method of crystal growing.
(or)
8.     Explain the Molecular Beam Epitaxy with a diagram of a MBE growth system.
9.     Describe the principle involved in a simple two lens probe forming electron optical system with its relevant diagrams.
(or)
10.   Explain Reactive Ion Beam etching.
11.   Describe on Channeling and its effects.
(or)
12.   With a diagram of typical commercial ion-implantation machine explain the practical aspects of ion implantation.
13.   Describe briefly the Dry and Chemical etching processes used to etch various metallization.
(or)
14.   (a) Write a note on the desired properties of the metallization for Integrated circuits.
        (b) Calculate the RC time constant for a 1cm doped polysilicon interconnection on a 1µm thick SiO2. The polysilicon has a thickness of 5000Aº and a resistivity ρ of 1000µΩ-cm.
15.   Explain the function of Auger Spectroscopy for scanning thin     film structures.
(or)
16.   Describe with flow chart the generic assembly sequence for plastic and ceramic packages. 
( 0 Votes )

Add comment


Security code
Refresh

Earning:  ₹ 5.05/-
You are here: PAPER M.Tech-M.Tech Nanotechnology VLSI Technology (Sathyabama University, Chennai, Tamil Nadu-2012)