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West Bengal Institute of Technology (WBIT) 2010 B.Tech Semester 1 - BASIC ELECTRICAL AND ELECTRONICS ENGINEERING -1 - Question Paper

Wednesday, 17 July 2013 12:10Web


West Bengal University of Technology (WBUT)

FIRST SEMESTER B.TECH. exam

10 DECEMBER 2010
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING - one (SUBJECT CODE: HU-101)

Time: three hours Max. Marks: 70

Name :

RoUNo.:..................................................................

Invigilator's Signature    ......................................

CS/B.TECH (NEW)/SEM-1/ES-101/2010-11 2010-11

BASIC ELECTRICAL & ELECTRONICS ENGINEERING-I

Time Allotted : 3 Hours    Full Marks : 70

THIS QUESTION BOOKLET CONSISTS OF 2 PARTS PART I & PART II.

TO ANSWER THE QUESTIONS USE SEPARATE ANSWER BOOKS FOR SEPARATE PARTS.

DO NOT ANSWER BOTH THE PARTS IN THE SAME ANSWER-BOOK.

The figures in the margin indicate full marks.

Candidates are required to give their answers in their own words

as far as practicable.

PART - I ( Marks : 35 )

GROUP - A ( Multiple Choice Type Questions )

1. Choose the correct alternatives for any five of the following :

5x1=5

i) The form factor of a wave is 1. Its shape is a) sinusoidal    b) triangular

c) square    d) sawtooth.

ii)    The admittance of a parallel circuit is 0-5 Z - 30. The circuit is

a) inductive    b) capacitive

c) resistive    d) in resonance.

iii)    The force experienced by a small conductor of length L, carrying a current I, placed in a magnetic field B* at an angle 0 with respect to B* is given by

a) BIL    b) BIL sin 0

c) BIL cos 0    d) zero.

iv)    The mutual inductance between two coupled coils is 10 mH. If turns of one coil are doubled and that in other are halved, the mutual inductance will be

a) 5 mH    b) 10 mH

c) 14 mH    d) 20 mH.

v)    Three resistors of 4 Q, 6 Q and 8 2 are connected in

parallel. The maximum power dissipation will occur in

- i

a) 4 Q    b) 6 Q

c) 8(2    d) equal in all resistors.

a) 5 V, lOfl    b) 10 V, 10 Q

vi) For the circuit shown, the Thevenins voltage and resistance as seen at ab Eire


c) 5 V, 5 Q    d) 15 V, 15 Q.

GROUP -B ( Short Answer Type Questions )

Answer any two of the following. 2x5= 10

2.    State and prove maximum power transfer theorem.

3.    Compare electric and magnetic circuits with respect to their similarities and dissimilarities.

4.    What is resonance ? Deduce the expression of frequency in a series RLC circuit at resonance.

5.    At t = 0, the instantaneous value of a 50 Hz, sinusoidal current is 5 Amp and increases in magnitude further. Its R.M.S. value is 10 Amp.

a)    Write the expression for its instantaneous value

i

b)    Find the current at t= 0-01 and t = 0-015 sec

c)    Sketch the waveform indicating these values.

GROUP -C ( Long Answer Type Questions )

CS/B.TECH (NEW)/SEM-1/ES-101/2010-11


Answer any two of the following. 2x10 = 20

6. a) For the circuit shown below, determine the current 11 , l2 , l3 using nodal analysis :    ,

b) For the circuit shown below, find the potential difference between a and d :

S'S*-

6 + 4

Explain what are meant by phase and phase difference of sinusoidal waves.

a)

b)


7.


A coil of resistance 30 Q and inductance 320 mH is connected in parallel to a circuit consisting of 75 Q in series with 150 yiF capacitor. The circuit is connected to a 200 volt, 50 Hz supply. Determine supply current and circuit power factor.    2 + 8

8. 0 State and explain Biot-Savart law.

b) A ring having a mean diameter of 21 cm and a crosssection of 10 cm 2 is made of two semicircular sections of cast iron and cast steel respectively with each joint having reluctance equal to air gap of 0-2 mm as shown in figure. Determine the ampere turns required to produce a flux of 0-8 mWb. The relative permeabilities of cast iron and cast steel are 166 and 800 respectively. Neglect fringing and leakage effects. 4 + 6

Cast steel

Cast steel

9. a) Prove that current in purely resistive circuit is in phase with applied A.C. voltage and current in purely capacitive circuit leads applied voltage by 90 and draw their waveforms.

b) A circuit consists of series combination of elements as reistance of 6 2, inductance of 0-4 M and a variable capacitor across 100 V, 50 Hz supply. Calculate

(i) value of capacitance at resonance, (ii) voltage drop across capacitor and (iii) Q factor of coil.    5 + 5

USE SEPARATE ANSWER-BOOK TO ANSWER PART-II QUESTIONS. PART - II ( Marks : 35 ) GROUP - A ( Multiple Choice Type Questions )

1. Choose the correct alternatives for any five of the following :

5x1=5

i)    Barrier potential of Ge diode is

a) 0-3 V    b) 0-7 V

c) 04 V    d) 0 V.

ii)    With both junctions    reverse    biased the transistor operates in

a) active region    b)    cut-off region

c) saturation region    d)    inverted region.

ill) If a resistor has the colour code ( brown-black-red ), the value of the resistor equals

a) 1000 Q    b) 10 k2

c) 110 Q    d) 100 Q.

iv) For full-wave rectifier

a)    one centre-tapped transformer is required

b)    two centre-tapped transformers are required

c)    more than two centre-tapped transformers are required

d)    centre-tapped transformer is not required.

v) X has high current, voltage, power gain. X is

a) CE amplifier    b) CB amplifier

d) none of these.


c) CC amplifier    d)

vi) a and P of a BJT are related as


b)

d)


GROUP -B ( Short Answer Type Questions )

Answer any two of the following. 2x5= 10

2.    Differentiate between Avalanche and Zener breakdowns.

3.    a) Explain with appropriate diagram why a semiconductor

acts as an insulator at about O K and why its conductivity increases with increasing temperature.

b) If a donor type of impurity is added to the extent of one

atom in 10 million Ge atoms, calculate the resistivity and conductivity of the N-type material so formed. What is the percentage of increase in the conductivity compared to the intrinsic Ge at 399 K. Given at 300 K, atoms/m 3 of Ge = 4-4 x 10 28 , Ni = 2 5 x 10 19, p = 0-38 m 2/V-s, p = 0-18 m 2/V-s.    2 + 3

4. Compare two types of full-wave recitifier :

a) Centre tapped transformer

b) Bridge type.

5. Find the values of (i) IB , (ii) IE , (iii) V CE , (iv) V E and V B for the following circuit. Assume (3 = 49 and VBE = 0-7 V.

GROUP-C ( Long Answer Type Questions )

Answer any two of tJie following. 2 x 10 = 20

6.    a) What is thermal runaway ? Can we interchange the

emitter and collector of a transistor ? In what region of the characteristic curve does a transistor operate when it is used as a switch.    4 + 3+1

b) What do you mean by load line for a transistor circuit ?

2

7.    Define h-parameters used in hybrid model of transistor with diagram. Compare the characteristics of CE, CC and CB transistors.    6 + 4

8.    a) Explain the principle of n-channel depletion MOSFET.

b) Write a short note on CMOS.    6 + 4

9.    Write short notes oh any two of the following :    2x5

i)    Clipper circuit

ii)    Ripple factor    1

iii)    Varactor diode.







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