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SRM University 2008 B.Tech Electrical and Electronics Engineering ELECTRONICS DEVICES - Question Paper

Thursday, 31 January 2013 12:50Web

B.Tech(PT)DEGREE EXAMINATION,DECEMBER 2008
2nd Semester
PEE207-ELECTRONIC DEVICES
Time:3 Hours Max.marks:100
ans ALL ques.
PART-A(10*2=20 Marks)


1.State Einstein legal regulations of semi conductor.

2.Define:Mobility.

3.Compare LED and PN junction diode.

4.Define :Tunneling effect.

5.State various operating regions of transistors.

6.Draw h-parameter equivalent circuit for CB configurations.

7.Define pinch off voltage.

8.Compare D-MOSFET and E-MOSFET

9.What is the used for heat sink?

10.Draw the structure and symbol of DIAC

PART-B(5*16 = 80Marks)
11.a.i define semiconductor and its classifications.
ii Draw and discuss the energy band diagram of extrinsic semiconductors.
(OR)
b.Explain briefly (i)Drift current (ii) Diffusion current

12.a. discuss the subsequent devices(i)PIN diode(ii)LDR
(OR)
b. Draw and discuss VI characteristics of zener diode.

13.a.Explain biasing and working of NPN transistor.
(OR)
b.Draw low frequency hybrid p-model of transistor and discuss its every terms.

14.a.Explain the construction and working of power MOSFET.
(OR)
b.Explain the operation of UJT and Draw its characteristics.

15.a. discuss the working and characteristics of DIAC
(OR)
b.Explain the following:
(i)Silicon wafer preparation (ii)Twin tube process


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