SRM University 2007 B.Tech Information Technology ELECTRONIC DEVICES AND CIRCUITS - Question Paper

COURSE NAME : ELECTRONIC DEVICES AND CIRCUITS
COURSE CODE : EC104
COURSE OFFERED TO : 1st year B.Tech (I.T)
NAME OF THE STAFF: M.ARUN KUMAR LECTURER/ICE






















UNIT I

TWO MARK ques.

1. Draw the V-I characteristics of a PN junction diode.
2. Explain the terms Knee voltage, Break down voltage in a PN junction diode.
3. What is Avalanche effect in a PN junction diode?
4. Write the Boltzmann current formula for a PN junction diode.
5. Give the relation ranging from the width of depletion region and applied bias voltage in a PN junction diode.
6. The leakage current in a reverse biased diode is 10nA at 20ºC. What will be its value at 30ºC ?
7. Give the relation ranging from the leakage currents in a reverse biased diode at temperature T1 and T2, where T2 > T1.
8. The leakage current Io in a reverse biased diode is 20nA at the reverse bias voltage of 10V. What will be its approximate value at 20V?
9. What do you understand by : a PN junction is
(a) Forward biased.
(b) Reverse biased.
10. Define intrinsic semiconductors and extrinsic semiconductors.
11. What is the difference ranging from intrinsic and extrinsic semiconductors.
12. Define the terms Depletion layer, Doping.
13. Why is silicon preferred to germanium in the manufacture of semiconductor devices?
14. How many valence electrons will a perfect conductor, semiconductor and insulator will have?
15. What are the 4 various regions in the transistor characteristics? Draw and mention.
16. Draw the symbols of NPN and PNP transistors.
17. What is meant by early effect?



18. In BJT why base area is less and collector area is more?
19. In BJT why base is lightly doped and emitter is highly doped?
20. Draw the two-diode analogy of the transistor and discuss why it cannot be used as a transistor.
21. Draw the input and output characteristics of a BJT.
22. Why the input impedance of FET is more than that of BJT?
23. Name the special features of a FET.
24. Draw the symbols of n-channel and p-channel JFET.
25. What are the 3 FET parameters?
26. What is the disadvantage of FET compared to BJT?
27. What is meant by current controlled device and voltage controlled device? provide examples
28. What do you understand by unipolar and bipolar device? provide examples.
29. Which device is called as unipolar discuss.
30. Explain the terms Pinch off and IDSS in a FET.
31. Write the Drain current formula for a FET.
32. Draw the transfer and drain characteristics of a FET.
33. What are the difference ranging from UJT and BJT?
34. What is intrinsic standoff ratio in a UJT?
35. Draw the equivalent circuit of a UJT.
36. Draw the V-I characteristics of UJT and mark the 3 regions of operation.
37. What do you mean by regeneration in UJT.
38. Explain the terms peak voltage and valley current in a UJT.

Earning:   Approval pending.