SRM University 2007 B.Tech Information Technology EC205 -- ELECTRONIC CIRCUITS - I - Question Paper

16. Determine IDQ, VGSQ and VDS for the E-MOSFET of figure provided beneath.

17. For the voltage divider bias network of figure given, determine.
(a) IB (b) IC (c) VCE (d) VC (e) VE

18.Comment on Fixed biasing in BJT and FET and discuss the procedure for locating suitable operating point on the characteristic curves.

UNIT - II
Part - A
1. Define Hybrid parameters.
2. Draw the hybrid equivalent for a general linear network.
3. Draw the hybrid equivalent for a transistor.
4. Define hi, hf, hr,and ho.
5. Give the hybrid formula for CE configuration.
6. Draw the hybrid equivalent for CE configuration.
7. Give the hybrid formula for CB configuration.
8. Draw the hybrid equivalent for CB configuration.
9. Give the hybrid formula for CC configuration.
10. Draw the hybrid equivalent for CC configuration.
11. Give the relation ranging from input voltage and current, output voltage and current and hybrid parameters for common – Emitter configuration.
12. Give the relation ranging from input voltage and current, output voltage and current and hybrid parameters for common – Base configuration.
13. Give the relation ranging from input voltage and current, output voltage and current and hybrid parameters for common – Collector configuration.
14. Give the voltage gain for CE configuration using exact analysis.
15. Give the current gain for CE configuration using exact analysis.
16. Give the input resistance for CE configuration using exact analysis.
17. Give the output resistance for CE configuration using exact analysis.
18. Give the power gain for CE configuration using exact analysis.
19. Give the voltage gain for CE configuration including source resistance.
20. Give the current gain for CE configuration including source resistance.
21. What are the approximations considered for transistor approximate analysis.
22. Give the voltage gain for CE configuration using approximate analysis.
23. Give the current gain for CB configuration using approximate analysis.
24. Give the input resistance for CE configuration using approximate analysis.
25. Give the output resistance for CC configuration using approximate analysis.
26. Give the power gain for CB configuration using approximate analysis.
27. Give the conversion formula for CC h-parameters provided CE h-parameters.
28. The CE h-parameters are hie = 1200 ?; hre = 2×10-4; hfe = 60; hoe = 10µA/v. obtain the CB h-parameters.

Earning:   Approval pending.