SRM University 2007 B.Tech Information Technology EC205 -- ELECTRONIC CIRCUITS - I - Question Paper

EC205 -- ELECTRONIC CIRCUITS - I
UNIT – I
PART - A
1. elaborate the needs of transistor biasing?
2. What is transistor biasing?
3. What is dc load line?
4. describe Q-point.
5. describe stability factor.
6. elaborate the factors that affect the stabilization of collector current?
7. elaborate the various methods of biasing BJT?
8. Draw an emitter bias BJT network.
9. Draw a voltage divider bias BJT network.
10. Draw a fixed bias BJT network.
11. elaborate the regions of operation in BJT? Mention the polarity of biasing for
various regions.
12. Mention the advantages of collector feedback over fixed bias in BJT.
13. Mention the advantages of emitter bias over fixed bias in BJT.
14. What is meant by thermal runaway?
15. discuss how a load line can be drawn from an emitter bias BJT network.
16. Determine the subsequent for fixed bias configuration of provided figure.
(a) ICQ (b) IBQ.

17. What is the condition for approximate analysis in voltage divider bias of BJT?
18. How an ac loadline varies from a dc load line?
19. The intersection of ___________ with the provided collector curve is _________.
20. Why compensation is necessary? elaborate the various methods of compensation?
21. How to bias gate-source junction of JFET?
22. elaborate the various methods of biasing JFET?
23. elaborate the regions of operation in JFET?
24. provided IDSS = 10 mA, Vp = -6V, determine the midpoint VGS and ID
25. Sketch the transfer characteristics for an n-channel JFET with IDSS = 10 mA,
Vp = -4V.
26. What happens if the gate terminal of JFET is forward biased?
27. Draw a voltage divider bias FET network.
28. Draw a drain to feedback bias E-MOSFET network.
29. Draw a voltage divider bias of depletion kind n-channel MOSFET network.
30. What happens when the value of Rs is increased in the self bias of JFET?
31. Draw the general transfer curve of depletion kind MOSFET and E-MOSFET.
32. Draw a transfer curve for E-MOSFET having VGS (Th) = three V, ID (on) = three mA,
VGS (on) = 10 V.
33. How to bias gate-source junction of E-MOSFET?
34. describe stabilization.
35. provided ß = 100, Ico = two µA, IB = 60 µA. Determine IC.
36. find the expression for IB in the voltage divider bias BJT network.
37. What is the difference ranging from depletion kind MOSFTET and E-MOSFET?

Earning:   Approval pending.