SRM University 2007 B.Tech Electronics and Communications Engineering BANK ELECTRONIC DEVICES - Question Paper

14. Write the applications for power MOSFET or VMOS.
15. What are the advantages of VMOS?
16. What are the 2 kinds of charge transfer devices?
17. What is BBD?
18. What is CCD?
19. What are the applications of BBD?
20. What are the applications of CCD?
21. Draw the construction for BBD & CCD and provide the difference.
22. What do you mean by storage and transfer condition in CCD?
23. Draw the symbol of both n-channel & p-channel, depletion and enhancement MOSFET.
24. Why a Field effect Transistor is called so?
25. elaborate the relative merits of a N-channel and P-channel FET?
26. discuss why BJT is called bipolar device &FET is called unipolar device?
27. provide a few application of FET.
28. What is a MOSFET? How many kinds of MOSFET are there?
29. How the constructional features of MOSFET differs from JFET?
30. Explain a few application of MOSFET&JFET.
31. Explain the difference ranging from UJT and BJT.
32. Explain terms peak point voltage, valley point voltage of a UJT.
33. Mention an application of UJT and draw the circuit symbol and mark the terminals.
34. The main operational difference ranging from UJT and FET is __________ .
35. Explain negative resistance from the characteristics of UJT.
36. Useful behaviour of UJT occurs when the emitter is __________ biased.
37. Draw the drain characteristics of Enhancement and Depletion mode of N-channel MOSFET.
38. How does the gate capacitance of MOSFET affect the performance?
39. What region of drain characteristics is used for VVR operation? Why?




PART-B


1. Explain the construction of N channel JFET with VI characteristics.
2. Define and discuss the parameters transconductance gm ,drain resistance rd and amplification factor ? of a JFET. Establish the relation ranging from them and also discuss the transconductance varying with drain current and gate voltage.
3. Compare JFET with BJT with the necessary diagrams.
4. Explain how FET is used as voltage variable resistor.
5. Explain the construction and operation of 3 phase charge coupled device with the necessary diagrams.
6. With the suitable diagram and VI characteristics discuss working of MOSFETs.
7. Explain the working and VI characteristics of Depletion MOSFET. elaborate the merits and demerits of this over enhancement MOSFET?
8. Explain the working and VI characteristics of Enhancement MOSFET.
9. Explain the working and VI characteristics of UJT.
10. Explain with the help a circuit diagram the working of a UJT relaxation oscillator.
11. Explain the operation of BBD with suitable diagrams.
12. Explain the working and VI characteristics of power MOSFET or VMOS.
13. How can a MOS transistor be used as a charge transferring device? discuss with the help of neat diagrams.

























UNIT – V


PART – A



1. Draw the layer model of TRIAC and its symbol.
2. Sketch the VI characteristics of a DIAC.
3. Draw the structure and symbol of DIAC.
4. Sketch the VI characteristics of a TRIAC.
5. What is intrinsic stand off ratio?
6. SCR is a __________ layered device.
7. Name the technology used for fabrication of transmitters or ICs.
8. List the basic process used in the silicon planar technology.
9. Explain the word “Epitaxy”.
10. What is the need for SiO2 layer? How thick is this layer?
11. What is ion implantation? provide its advantages.
12. Give the different isolation techniques used in ICs.
13. Give the steps in photolithography process.
14. List the advantages of IC over discrete component circuit.
15. Sketch the cross-section of a CMOS transistor.
16. Discuss the difference ranging from thin films and thick films.
17. List the different methods used for depositing thin films.
18. Discuss cathode sputtering.
19. Describe thick film technology.
20. What is a GTO?
21. What is the thyristor? Mention a few of them.
22. Mention a few applications of SCR, TRIAC, UJT.
23. Give the difference ranging from SCR>O.
24. Define latching current & holding current of a SCR
25. What are the advantages of TRIAC over SCR?
26. DIAC is bi-directional device discuss.
27. Give the difference ranging from thick film and thin film technology.
28. Mention 2 ways of turning off a SCR.
29. What are the various ways of Vapour deposition?
30. What is the meaning of twin tub process?













PART-B

1. Explain DIAC with VI characteristics.
2. Explain SCR with VI characteristics.
3. Explain TRIAC with VI characteristics. What is the advantage of TRIAC over SCR?
4. Explain 2 transistor analogy of a SCR and discuss its breakdown operation.
5. Explain the operation of a SCR as a rectifier.
6. discuss steps of fabrication of monolithic integrated circuits in detail.
7. discuss the steps of NMOS fabrication
8. Explain the different methods of fabrication used in CMOS.
9. Explain thin film technology with relevant sketches
10. Explain the thick film technology with relevant sketches.
11. Explain the different steps involved in planar process. Draw the relevant sketches.
12. Explain the steps of PMOS fabrication.
13. Explain twin tub fabrication in detail.

Earning:   Approval pending.