SRM University 2007 B.Tech Electronics and Communications Engineering BANK ELECTRONIC DEVICES - Question Paper

27. __________ Configuration has high voltage gain, among CE,CC and CB transistors.
28. Why it is called as bipolar junction transistor?
29. What is the difference ranging from PNP and NPN transistor ?
30. What are the various configurations of BJT?
31. Explain various kind of current gain (?,?,?)?Show how they are related with every other?
32. Why are power transistor given with heatsinks?
33. Define early effect or basewidth modulation of transistor.
34. What is known as Heatsink?
35. Mention the 3 regions of transistor amplifier using the CB output characteristics.
36. Express any 2 hybrid Pi parameters in terms of small signal low frequency hybrid parameters.
37. Why is CE amplifiers preferred to others?
38. Draw the hybrid Pi equivalent of BJT.
39. Draw all the possible configurations of NPN transistor?
40. Draw all the possible configurations of PNP transistor?





PART-B

1. Explain CE configuration of BJT with i/p and o/p characteristics.
2. Explain CB configuration of BJT with i/p and o/p characteristics.
3. Explain CC configuration of BJT with i/p and o/p characteristics.
4. Explain Eber’s moll model of PNP transistor. How is this useful in getting output characteristics.
5. Briefly discuss the commonly available heatsinks.
6. Derive the hybrid-parameters for CB configuration.
7. Derive the hybrid-parameters for CE configuration.
8. Derive the hybrid-parameters for CC configuration.
9. Explain high frequency ? model for BJT?
10. Compare the CB, CC, CE configuration with application.
11. Explain transistor as a switch (delay time, storage time, rise time, fall time).
12. Derive the current components of BJT.


















UNIT – IV

PART-A

1. FET is a ______________ operated device.
2. Define pinch off voltage.
3. Why is FET called a unipolar device?
4. How can a FET be used as a voltage controlled resistor?
5. Why are FETs are more advantageous than BJT?
6. Give the basic principle of VVR.
7. Give the relation ranging from transconductance gm , drain resistance rd and amplification factor µ of a FET.
8. Differentiate ranging from depletion mode and enhancement mode.
9. Input impedance of FET is _________ than that of junction transistor.
10. Draw the cross part of an n-channel VMOS.
11. Difference ranging from MOSFET & VMOS.
12. Draw the symbol for n-channel and p-channel VMOS.
13. VMOS can be defined as ____________ MOSFETS.

Earning:   Approval pending.