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SRM University 2007 B.Tech Electronics and Communications Engineering BANK ELECTRONIC DEVICES - Question Paper

Wednesday, 30 January 2013 04:45Web














SRM INSTITUTE OF SCIENCE AND TECHNOLOGY
(DEEMED UNIVERSITY)

ques. BANK

I YEAR B.Tech (II Semester)

ELECTRONIC DEVICES

(COMMON FOR EC102, EE104, IC108, BM106)














UNIT-I


PART-A


1. What are intrinsic and extrinsic semiconductors?
2. List the properties of semiconductors.
3. Draw the energy band diagram of germanium and a metal.
4. What do you mean by Valance electron?
5. How drift current is produced?
6. Define ‘electron volt’.
7. The relationship ranging from field intensity and potential is provided by ______________.
8. Draw the path of an electron in perpendicular electric and magnetic fields when the initial velocity is zero.
9. Write the formula for the period and angular velocity of a particle in a magnetic field.
10. What is the value of Eg for Ge and Si at room temperature (300k)?
11. Draw the energy band diagram of a semiconductor and conductor.
12. Draw the motion of a charged particle in a magnetic field.
13. What is drift current? Upon what factors it depends?
14. Why do we go for Extrinsic semiconductor?
15. How is extrinsic semiconductor formed?
16. List the pentavalent and trivalent impurities.
17. Draw the motion of a charged particle in a uniform electric field.
18. What is diffusion current?
19. Distinguish ranging from Drift and Diffusion current.
20. The e/m value of electron is _____________.
21. Differentiate insulators, semiconductors and metals.
22. Explain what is hole. How do they move in intrinsic semiconductor?
23. What does doping in semiconductor mean?
24. Explain majority and minority carrier in semiconductor?
25. What is fermi level? How is it useful in the analysis of semiconductors?
26. Define the term’s conductivity and mobility in semiconductor.
27. State Einstein relationship.
28. Define carrier lifetime.
29. State mass action legal regulations.
30. Write down the expressions, which are used for finding the electron and hole concentration.







PART-B

1. discuss motion of an electron in electric field.
2. discuss motion of an electron in magnetic field.
3. explain motion of an electron in both magnetic and electric field.
4. Derive the continuity formula from the 1st principle.
5. Derive the Fermi – level formula for an intrinsic semiconductor with the Energy band diagram.
6. discuss drift and diffusion current and write the expressions for total Current density due to holes and electrons
7. discuss mass action legal regulations.
8. Derive the formula for the concentration for holes and electrons.
9. discuss in detail the classification of solids with energy band diagram.



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