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Periyar University 2006 B.Sc Electronics PHYSICS OF MATERIALS AND SEMI CONDUCTOR DEVICES - Question Paper

Sunday, 27 January 2013 01:50Web

First Semester
Electronics
PHYSICS OF MATERIALS AND SEMI CONDUCTOR
DEVICES
TiMe : 3 hours Maximum : 100 marks
PART A — (10 x two = 20 marks)
ans ALL ques..
All ques. carry equal marks.
1. What is ionic bonding?
2. Define space lattice.
3. Define mean free path.
4. What is Phonons?
5. What is Doping?
9. Define Breakover voltage.
10. What is a thermistor?
PART B — (5 x four = 20 marks)
ans ALL ques..
All ques. carry equal marks.
11. (a) Briefly discuss the structure of Diamond.
Or
(b) Write note on Braggs legal regulations of X-ray diffraction.
12. (a) Briefly discuss the Matheissen's rule.
Or
(b) Briefly discuss the term electron drift and mobility.
13. (a) Write a note on intrinsic semiconductor.
Or
(b) Briefly discuss Mass action legal regulations.
2 S.No. 1365



(a) Briefly discuss the constructional details of
zener diode.
Or
(b) Explain only the construction detail of
N channel FET.
(a) Write a note on CCD.
Or
(b) Briefly discuss the 4 layer structure of
thyristor.
PART C — (5 x 12 = 60 marks)
Answer ALL ques..
All ques. carry equal marks.
16. (a) With a neat diagram discuss :
(i) Covalent-bonding.
(ii) Metallic-bonding.
Or
(b) discuss how the crystal structure is dermined using powder method.
3 S.No. 1365


17. (a) discuss the Free electron theory.
Or
(b) discuss the thermal conductivity and
electrical conductivity of materials.
18. (a) With a neat diagram discuss the P kind semiconductor and also discuss the mobile charge carriers and immobile ions.
Or
(b) discuss the energy band diagram for conductors, insulators and semiconductors.
19. (a) discuss the V-I characteristics of junction diode for Forward and Reverse bias.
Or
(b) discuss the construction and working function of a Enhancement MOSFET.

20. (a) discuss the construction and working of an SCR.
Or
(b) discuss the basic concept and working of CCD.



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