Cochin University of Science and Techology (CUST) 2008 B.Tech Electronics and Communications Engineering VLSI Design (e ) - Question Paper

VLSI Design (June 2008)

1a. define the NMOS fabrication process with neat sketches
b. what do you mean by monolithic and hybrid integrated circuits and discuss its application
c. elaborate the various factors considered in IC processing
2a. Compare the band structure and material properties of Ga As and Si
b. discuss the ion implantation in IC fabrication in detail
c. Compare thin film and thick film technology
3a. Derive an expression for drain current for long channel MOSFET and discuss the different modes of operation under various voltages
b. discuss about any five short-channel effects
4a. Determine the pull up to pull down ratio of an NMOS inverter driven by a different NMOS inverter
b. explain about different 2nd order effects in MOSFET
5a. Draw the circuit diagram, stick diagram and layout of 2 input CMOS NAND gate
b. discuss the term sheet resistance and area capacitance in VLSI design
c. discuss the need of design rule
6a. discuss about super buffers and inverter delays
b. Draw the stick diagram of CMOS inverter and discuss
7a. discuss with diagrams the 3 classes of bus lines
b. discuss the different implementation strategies of digital IC
8a. discuss the working of 2 input XNOR gate using pass transistor
b. discuss CMOS domino logic
9a. discuss the different timing classifications of digital systems
b. discuss about self timed signaling
10a.Compare synchronous and asynchronous systems
b. discuss the concept and implementation of synchronizer
c. discuss the clock distribution techniques

Earning:   Approval pending.