Mahatma Gandhi University (MGU) 2009-3rd Sem B.Tech Applied Electronics and Instrumentation First series ,ester - Question Paper

MOUNT ZION COLLEGE OF ENGINEERING
Kadammanitta, Pathanamthitta


1st Series exam

3rd Semester-Applied Electronics and Instrumentation

SOLID STATE DEVICES
Max Marks:60
Max Time :2hrs

PART A

ans any 6 ques.
__________________________
1. What is conductance?Derive the formula for the identical for semiconductors.

2. discuss temperature dependance of mobility with plot?

3. discuss the Einstein's formula for a semiconductor?

4. Derive the diode formula.Also obtain the current flowing through the diode with both forward and
reverse bias with plots?

5. Brieflyexplain the switching characteristics of a pn junction diode with wave forms?

6. Sketch the V-I characteristics of a tunnel diode.Indicate the negative resistance region.What
is it's significance?

7. Derive the expression for brekdown voltage of a pn junction diode?

(6x4=24)



PART B

ans any 3 ques.
__________________________
8. Derive the formula for mobility for semiconductors.What are the factors affecting mobility?Plot
mobility v/s temperature graph?

9. Sketch the energy band diagram of unbiased pn junction diode and tag it.Draw and discuss the
V-I characteristics and also the equivalent circuits for both the bias condition with energy band
diagrams?

10.Explain the working principle and V-I characteristics of
(1)Photodiode (2)Varactor diode
Also state their applications

11. (a).Distinguish ranging from the physical mechanisms of zener and avalanche breakdown.

(b).Explain physically the reason of junction capacitance.Derive the formula for diffusion
capacitance.Plot the C-V graph.

(3x12=36)

Earning:   Approval pending.