Deemed University 2010 B.Tech Computer Science and Engineering University: Lingayas University Term: III Title of the : Material and Semi Conductor Devices - Question Paper
Roll No. ..
Lingayas University, Faridabad
Examination May, 2010
Course: B.Tech. Year: IInd
Semester: III Paper Code: EE-201E
Subject: Material and Semi Conductor Devices
[Time: 3 Hours] [Max. Marks: 100]
Before answering the question, candidate should ensure that they have been supplied the correct and complete question paper. No complaint in this regard, will be entertained after examination.
Note: Attempt Five Question in all. All questions carry equal marks.
Q.1. (a) What are the factors affecting the conductivity of the materials? Give a brief description. (8)
(b) Define and briefly explain about the drift velocity and collision time.
(5)
(c) The carrier concentration in a material of conductivity 0.018/ohm m is 1019 electrons /m3. A voltage of 0.16 volts is applied across the 0.29 mm thick material. Determine the drift velocity of the carriers. (mass of electron m= 9.1x10-31 kg and charge on an electron e = 1.602 x10-19 C)
(7)
Q-2. (a) Describe the dipole moment, polarization and dielectric constant when a static electric field is applied across an insulating material (12)
(b) Explain about the dielectric losses when an alternating electric field is applied across an insulting material. Draw an equivalent circuit of a condenser carrying a lossy dielectric material. (8)
Q-3. (a) Describe the classification of magnetic materials based on the arrangement of their magnetic moments. (15)
(b) Define and explain the following
(i) Magnetic Dipole moment
(ii) Susceptibility (5)
Q-4. (a) Explain about the drift current and diffusion current. (8)
(b) Explain about the continuity equation. (5)
(c) Differentiate between the transition capacitance and diffusion capacitance explain each one briefly. (7)
Q-5. (a) Explain the different types of breakdowns in a P-N junction diode. (10)
(b) Explain how the zener diode is different from other diodes. Describe the voltage regulator application of the zener diode. (10)
Q-6. Explain the construction and working of: (20)
(i) BJT
(ii) MOSFET
Q-7. (a) Explain the construction of SCR? (5)
(b) Explain the characteristics of SCR describing about the forward and reverse blocking regions. (10)
(c) Describe any one application of SCR using diagrams. (5)
Q-8. Write short notes on any four of the following: (5x4=20)
(i) DIAC
(ii) TRIAC
(iii) GTO
(iv) IGBT
(v) Uni Junction Transistor
(vi) LED
No. ..
Lingayas University, Faridabad
Examination December, 2009
Course: B.Tech. Year: IInd
Semester: III Paper Code: EE-201E
Subject: Material and Semi Conductor Devices
[Time: 3 Hours] [Max. Marks: 100]
Before answering the question, candidate should ensure that they have been supplied the correct and complete question paper. No complaint in this regard, will be entertained after examination.
Note: Attempt Five Question in all. All questions carry equal marks.
Q.1. (a) What are the factors affecting the conductivity of the materials? Give a brief description. (8)
(b) Define and briefly explain about the drift velocity and collision time.
(5)
(c) The carrier concentration in a material of conductivity 0.018/ohm m is 1019 electrons /m3. A voltage of 0.16 volts is applied across the 0.29 mm thick material. Determine the drift velocity of the carriers. (mass of electron m= 9.1x10-31 kg and charge on an electron e = 1.602 x10-19 C)
(7)
Q-2. (a) Describe the dipole moment, polarization and dielectric constant when a static electric field is applied across an insulating material (12)
(b) Explain about the dielectric losses when an alternating electric field is applied across an insulting material. Draw an equivalent circuit of a condenser carrying a lossy dielectric material. (8)
Q-3. (a) Describe the classification of magnetic materials based on the arrangement of their magnetic moments. (15)
(b) Define and explain the following
(i) Magnetic Dipole moment
(ii) Susceptibility (5)
Q-4. (a) Explain about the drift current and diffusion current. (8)
(b) Explain about the continuity equation. (5)
(c) Differentiate between the transition capacitance and diffusion capacitance explain each one briefly. (7)
Q-5. (a) Explain the different types of breakdowns in a P-N junction diode. (10)
(b) Explain how the zener diode is different from other diodes. Describe the voltage regulator application of the zener diode. (10)
Q-6. Explain the construction and working of: (20)
(i) BJT
(ii) MOSFET
Q-7. (a) Explain the construction of SCR? (5)
(b) Explain the characteristics of SCR describing about the forward and reverse blocking regions. (10)
(c) Describe any one application of SCR using diagrams. (5)
Q-8. Write short notes on any four of the following: (5x4=20)
(i) DIAC
(ii) TRIAC
(iii) GTO
(iv) IGBT
(v) Uni Junction Transistor
(vi) LED
| Earning: Approval pending. |
