Deemed University 2009 A.M.I.E.T.E Electronics

(C) Higher effect of diffusion capacitance.
(D) Higher effect of depletion capacitance.

i. NMOS is preferred over PMOS because

(A) Electron diffuses faster than holes.
(B) Mobility of electron is higher than hole.
(C) Easy to fabricate.
(D) Lower cost.

j. Universal gates are

(A) AND, OR and NOT gates.
(B) XOR and XNOR gates.
(C) RTL and TTL gates.
(D) NAND and NOR gates.


ans any 5 ques. out of 8 ques..
every ques. carries 16 marks.


Q.2 a. Draw and discuss CMOS Op-amp. (8)

b. Design the instrumentation amplifier and find its output voltage. (8)

Q.3 a. Design a 4-bit bi-directional shift register and discuss it. (8)

b. Design a four bit up-down ripple counter and discuss it with improper logical waveform. (8)

Q.4 a. obtain the order and transfer function of the Butterworth LPF whose specification as follows: =10 KHz, = 50 KHz, =1 dB, =20 dB and DC gain is unity. (10)

b. Derive an expression for the transfer function of the second order notch filter. (6)

Q.5 a. What is switched-capacitor filter? discuss the operation with a practical circuit. (8)

b. discuss the dual-slope ADC with suitable diagram. (8)

Q.6 a. Implement the Full Adder using eight x one Multiplexers. (8)

b. Draw and discuss the logarithmic amplifier with suitable mathematical relation. (4)

c. Draw and discuss logarithmic multiplier of 2 analog signals. (4)

Q.7 a. discuss diffusion capacitance and transition capacitance. (4)

b. How do you ensure that faster switching operation being made using Schottky diode in transistor circuit? (2)

c. discuss the switching characteristics of diode using suitable diagram. (10)

Q.8 a. Explain: Noise margin, Propagation delay, Power dissipation, Delay-power product, Fan-in and Fan-out. (10)

b. discuss the operation of the NMOS transistor as a switch in the implementation of pass-transistor logic circuit. (6)

Q.9 a. discuss the operation of basic TTL NAND gate. (8)

b. Compare static RAM with dynamic RAM. (8)

Earning:   Approval pending.