Deemed University 2009 A.M.I.E.T.E Electronics

i. n-channel FETs are superior to p-channel FETs because

(A) they have higher input impedance.
(B) they consume less power.
(C) mobility of electron is greater than that of holes.
(D) none of them.

j. In the situation of IC fabrication, metallisation means

(A) connecting metallic wires
(B) forming interconnecting conduction trend and bonding pads.
(C) depositing SiO2 layer
(D) covering with a metallic cap


ans any 5 ques. out of 8 ques..
every ques. carries 16 marks.

Q.2 a. Outline an experimental set-up with necessary precautions for determining Hall coefficient, Hall angle and Hall mobility in a provided semiconducting specimen. (8)

b. A Si is doped with , what is the equilibrium hole concentration at 300 K? Where is relative to . (8)

Q.3 a. explain the flow of current with bias in the case of a metal-n-type semiconductor Schottky contact. (8)

b. How can 1 find rectifying and ohmic contacts in a junction device. discuss their importance. (8)

Q.4 a. Draw and discuss the equivalent circuit of a MOSFET showing the passive capacitive and resistive components. (8)

b. define the switching characteristics of BJT and also explain its frequency limitations. (8)

Q.5 a. Write short note on any 2 of the following:-
(i) MOS capacitor.
(ii) Kirk effect.
(iii) Base transport factor. (4+4 = 8)



b. discuss the transferred electron mechanism and show that for successful domain formation there is a critical product of electron concentration and sample length. (8)

Q.6 a. discuss crystal growth and wafer preparation in monolithic IC processing. (8)

b. discuss the Flip-chip Techniques. Also explain the various packaging used in IC fabrication. (8)

Q.7 a. discuss short channel effects in MOSFET. (8)

b. Briefly discuss the operation of a semiconductor LASER. explain its major applications. (8)

Q.8 a. What is donor concentration in a provided sample of semiconducting material of one ohm-cm resistivity at ? The mobility for the sample is and the electronic charge coulomb. (8)

b. discuss the effect of temperature on diode characteristics. (4)

c. discuss drain resistance, transconductance and amplification factor, derive the relation ranging from them. (4)

Q.9 a. discuss the origin of the negative differential mobility in a Gunn diode. Mention uses of Gunn oscillators. (8)

b. discuss the working of an IMPATT diode. define its applications. (8)

Earning:   Approval pending.