Deemed University 2009 A.M.I.E.T.E Electronics

AMIETE – ET (OLD SCHEME)

Code: AE25 Subject: PHYSICAL ELECTRONICS AND SOLID STATE DEVICES
Time: three Hours Max. Marks: 100

NOTE: There are nine ques. in all.
· ques. one is compulsory and carries 20 marks. ans to Q. 1. must be written in the space given for it in the ans book supplied and nowhere else.
· Out of the remaining 8 ques. ans any 5 ques.. every ques. carries 16 marks.
· Any needed data not explicitly given, may be suitably presumed and said.


Q.1 select the accurate or the best option in the following: (2 10)

a. A photo diode operates in ________ of I-V characteristics

(A) Ist quadrant (B) IInd quadrant
(C) IIIrd quadrant (D) IVth quadrant

b. To operate BJT in active mode

(A) (B)
(C) (D)

c. Schottky barrier is a

(A) metal semiconductor junction
(B) p-n semiconductor junction
(C) semiconductor insulator junction
(D) metal insulator junction

d. A diode having negative resistance is

(A) PIN diode (B) PN Junction diode
(C) Tunnel diode (D) Schottky diode

e. FET is

(A) current controlled device .
(B) a device having low input resistance.
(C) a unipolar device.
(D) a device that offers large gain-bandwidth product.

f. Junction capacitance is related with barrier potential as

(A) (B)
(C) (D)



g. Fermi level in an intrinsic semiconductor lies

(A) in the middle of the conduction band
(B) closer to valence band than conduction band
(C) closer to conduction band than valence band
(D) in the middle of the forbidden band

h. The fastest logic gate is

(A) ECL (B) MOS
(C) DCIL (D) RTL

Earning:   Approval pending.