Indian Institute of Technology Mumbai (IIT-M) 2009 Other Bachelor

26. The eigen values of the subsequent matrix are
-1 three 5
-3 -1 6
0 0 3






 

(A) 3,3 + 5j,6 - j (B) -6 + 5j,3 + j,3 - j
(C) three + j,3 - j,5 + j (D) 3, -1 + 3j, -1 - 3j
27. An AC source of RMS voltage 20V with internal impedance ( ) S Z = one + 2j W feeds a
load of impedance ( ) L Z = seven + 4j W in the figure beneath. The reactive power
consumed by the load is
(A) 8VAR (B) 16VAR (C) 28VAR (D) 32VAR
28. The switch in the circuit shown was on position a for a long time, and is moved to
position b at time t=0. The current i(t) for t>0 is provided by
(A) 125t ( ) 0.2e u t mA - (B) 1250t ( ) 20e u t mA -
(C) 1250t ( ) 0.2e u t mA - (D) 1000t ( ) 20e u t mA -
( ) L Z = seven + 4j W
( ) S Z = one + 2j W
20Ð0ºV
+-
+-
5kW
i (t)
10kW a b
100V
0.5µF 0.3µF
0.2µF
EC½ GATE Paper 2009 www.gateforum.com
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29. In the circuit shown, what value of RL maximizes the power delivered to RL?
(A) 2.4W (B)
8
3
W (C) 4W (D) 6W
30. The time domain behavior of an RL circuit is represented by
( Rt /L ) ( )
0
di
L Ri V one Be sint u t .
dt
+ = + -
For an initial current of ( ) 0 V
i 0 ,
R
= the steady state value of the current is provided
by
(A) ( ) 0 V
i t
R
® (B) ( ) 0 2V
i t
R
®
(C) ( ) 0 ( ) V
i t one B
R
® + (D) ( ) 0 ( ) 2V
i t one B
R
® +
31. In the circuit below, the diode is ideal. The voltage V is provided by
(A) ( ) i min V,1 (B) ( ) i max V,1 (C) ( ) i min -V,1 (D) ( ) i max -V,1
32. Consider the subsequent 2 statements about the internal conditions in an
n-channel MOSFET operating in the active region
S1: The inversion charge reduces from source to drain
S2: The channel potential increases from source to drain
Which of the subsequent is correct?
(A) Only S2 is actual
+-
i V 100V

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