Indian Institute of Technology Kharagpur (IIT-K) 2009 M.E Electronics and Telecommunications CBSE Indian Institute of Technology Khargpur Elec and Telecommunication - Question Paper

CBSE Indian Institute of Technology Khargpur M.E Electronics and Telecommunications

Q.1 — Q.20 Carry 1 Mark every.
1. The rank of the matrix
1 one 1
1 -1 0 is:
1 one 1
(A) 0
(B) 1
(C) 2
(D) 3
2. VxVxP, wherePisa vector, is equal to
(A) PxVxP-V2P
(B) V2P+V(V.P)
(C) V2P+VxP
(D) v(v.P)-v2P
3. [[(vxP).ds, where P is a vector, is equal to
(A) 4P.dI
(B) VxVxP.dI
(C) 4VxP.dI
(D) [[[V.Pdv
4. A probability density function is of the form
p(x) = Ke aix1 XE
The value of K is
(A) 0.5
(B) 1
(C) O.5cL
(D) x
5. A solution for the differential formula
k(t)+2x(t) = 5(t)
with initial condition x(0 —) = 0 is:
(A) e 2u(t)
(B) e2u(t)
(C) e u(t)
(D) &u(t)
6. A low-pass filter having a frequency response H(ja) = A(ai)edoes not
produce any phase distortion if
(A) A(a) = Cai2,Ø(ai) = kai3
(B) A(a) = Cai2,Ø(ai) = ko.
(C) A(a)=Ca,Ø(a)=ka2
(D) A(a)=C, )=ka1
7. The values of voltage (V3) across a tunnel-diode corresponding to peak and valley currents
are V, and V1 respectively-:- The range of tunnel-diode voltage VD for which the slope of its
IVD characteristics is negative would be
(A) V3
(B) O
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(C) V,V
(D) VdVV
8. The concentration of minority carriers in an extrinsic semiconductor under
equilibrium is:
(A) directly proportional to the doping concentration
(B) inversely proportional to the doping concentration
(C) directly proportional to the intrinsic concentration
(D) inversely proportional to the intrinsic concentration
9. Under low level injection assumption, the injected minority carrier current for an extrinsic
semiconductor is essentially the
(A) diffusion current
(B) drift current
(C) recombination current
(D) induced current
10. The phenomenon known as “Early Effect” in a bipolar transistor refers to a reduction of the
effective base-width caused by
(A) electron-hole recombination at the base
(B) the reverse biasing of the base-collector junction
(C) the forward biasing of emitter-base junction

Earning:   Approval pending.