Thapar University 2007 M.Tech Electronics and Communication Engineering Microelectronics Technology - Question Paper
Thapar Institute of Engineering & Technology
M.E. ECE (1st Year)
Final Term exam
CN003 (Microelectronics Technology)
Thapar Institute of Engineering and Technology, Patiala ME- 1st year EC End Semester Examination
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Course Code: CN 003 Course name: Microelectronics Technology Instructor:Ms. Paramjit Kaur |
Time Allotted: 3 hours Max Marks:45 Date:13.12.2006 |
Note: Question 1 is compulsory. Do any 3 Questions From Q-2 to Q-5. Answers should be to the point.
Ql. Discuss
(5*3=15)
a. LPE
b. Doping and Autodoping
c. Thin Film Characteristics
d. MOCVD
e. LO-COS
Q2 a. Describe the general classification of Integrated Circuits?
b. Mention the masking properties of Si02. (2*5=10)
Q3. a. What is EGS and explain the multistep process to obtain EGS?
b. From Ficks First Law of diffusion, drive the Ficks Second Law?
(2*5=10)
Q4 a. The bulk resistivity of nichrome is 120uQ-cm. Calculate the
thickness T in Angstroms of a film with sheet resistivity of 100Q per square, b. Explain the fabrication steps of CMOS?
(2*5=10)
Q5 a. Why seed crystal is used for crystal growth? Explain,
b. What is Plasma Oxidation?
(2*5=10)
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Attachment: |
| Earning: Approval pending. |
