Jaypee Institute of Information Technology (JIIT) 2008 M.Tech Electronics and Communication Engineering Test 3 : Photonics & Microwave Devices - Question Paper
JAYPEE UNIVERSITY OF INFORMATION TECHNOLOGY WAKNAGHAT TEST ni (MAY 2008)
B.TECIUVll SKM). M.TGCII.
COURSE CODE: PH 608 MAX. MARKS: 30
COlRSF. CREDITS 3 MAX. TIME: I HR 30 MIN.
COURSE NAME: PHOTONICS AND MICROWAVE DEVICES
Note: All ihr questions are compulsory
* SECTION A
Q.l Explain the following in brief (2 marks cacb)
I. Gradient, divergence and curl of a field.
II. Uniqueness theorem.
III. Radiative and nonradiative transitions in a semiconductor.
IV. Power conversion efficiency of an IMPATT diode.
SECTION B
Each question carries 4 marks
Q.2 Using Maxwell's 2*1 and 4 equations derive Poyntings Theorem. Interpret the terms involved.
QJ Explain the term Varaetor diode. Draw the equivalent circuit of a packaged reverse biased p-n junction varaetor diode and find the quality factor and the intrinsic cut off frequency foe the same.
Q.4 Draw the typtcal electron-hole distribution in the various regioas of p-i-n diode under forward bias condition Also by solving the ambipolar transport equation in ihe i-region with appropriate boundary conditions show that the diode current is given hy
W 1 \2kT)
Q.5 What do you mean by barrier-injection transit time? Draw the energy bond diagram of a reverse biased MSM structure with dc bias higher than Vpj but lower than Vfs-
SECTIONC
Each question carries 3 marks
Q.6 Consider a Silicon IMPATT diode with the width of avalanche region xa 2ra, * 200mA, saturation velocity v, I O cm sec*, A 10'5 cm2, and 0.5 V*1. Calculate the inductance La and capacitance Cj of the avalanchc region.
Q.7 A silicon n*-p junction solar cell with a 2 cm' surface area and N4 - 1015 cm4 in the base region. Neglecting the contribution of (he contribution of n* region and assuming D. m SO cm' sec'1./* 3 (i sec,andGi 5 * lOcm*sec'1. Calculateand
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