Bangalore University 2007 Diploma Instrumentation

(ii)   Peak inverse voltage

 

4.    (a)    discuss
the characteristic of UJT.

       (b)   
Write a note on TRAPATT Diode.

       (c)   
discuss the characteristics of Tunnel Diode.

part - III

5.    (a)    discuss
output characteristic of PNP transistor in CE mode with circuit diagram.

              
Indicate the various region of importance.

       (b)   
describe thermal run away. How it can be prevented in high power transistor?

       (c)   
Name 3 various transistor configuration.

 

6.    (a)    discuss
the construction and working of NPN transistor.

       (b)   
elaborate 3 methods of biasing transistor?

       (c)   
describe a
and b.
Derive the relation ranging from them.

Earning:   Approval pending.