Bangalore University 2009 Diploma Instrumentation & Control Engineering ELECTRONICS & COMMUNICATION ENGINEERING BOARD - INSTRUMENTATION & CONTROL ENGINEERING - Question Paper
Saturday, 23 March 2013 09:10Web
II SEMESTER DIPLOMA EXAMINATION, MAY 2009
ELECTRONICS & COMMUNICATION ENGG. BOARD
FOR INSTRUMENTATION CONTROL ENGINEERING
SEMICONDUCTOR DEVICES
Time : three Hours Max. Marks : 100
Note : 1. part - I is compulsory.
2. ans any six full ques. choosing two ques. every
from parts - II, III and IV.
part - I
1. (a) Fill in the blanks :
(i) A FET is essentially a .......... driven device.
(ii) A semiconductor diode designed to operate in the break
down region is called a ............ diode.
(iii) Schottkey diode has a ........... semiconductor junction.
(iv) LED emits light only when ............. biased.
(v) Out of 3 regions of a transistor ............ is more heavily
doped than the other.
(b) discuss majority and minority carriers.
part - II
2. (a) discuss conductor, insulator and semiconductor in terms of energy level
diagram.
(b) What is dopent? List the kinds of dopents with examples.
(c) discuss the formation of PN junction.
3. (a) discuss the effect of temperature on barrier.
(b) discuss VI characteristics of semiconductor diode under forward and reversed bias.
(c) With the basic construction features discuss the working of Gunn diode.
4. (a) discuss the subsequent terms :
(i) Reverse breakdown voltage.
(ii) Peak Inverse voltage.
(iii) Knee voltage.
(iv) Max Power rating.
(b) discuss the working principle of PIN diode.
(c) discuss the working of varactor diode.
part - III
5. (a) discuss the construction and working principle of PNP transistor.
(b) discuss CB configuration and its characteristics.
(c) Deduce the relation ranging from alpha and beta.
6. (a) discuss output characteristics of transistor in CE mode and indicate
cutt off, saturation and active region.
(b) discuss the working of transistor as a switch and amplifier.
(c) List the advantages of ICS.
7. (a) define the steps involved in fabrication of monolithic IC.
(b) What is Heat sink? How to choose heat sink.
(c) discuss the construction of LASER DIODE? List the applications.
part - IV
8. (a) discuss construction and operation of a N-channel JFET.
(b) Differentiate JFET and BJT.
(c) discuss drain characteristics of JFET with the suitable circuit diagram.
9. (a) describe the JFET parameters and deduce the relations ranging from them.
(b) define the construction and working on N-channel enhancement MOSFET.
(c) elaborate the advantages of CMOS technology.
10. (a) discuss the construction and characteristics of photo diode.
(b) discuss the subsequent terms :
(i) Photo emissivity.
(ii) Photo conductivity.
(iii) Photo voltaic effect.
(c) discuss construction and working of opto coupler.
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| Earning: Approval pending. |
