Annamalai University 2008-2nd Year B.Sc Electronics " 640 MATERIAL PHYSICS AND SEMICONDUCTOR DEVICE " ( - III ) ( GROUP -A-MAIN ) ( PART - III ) ( ) 5253 - Question Paper
B
Name of the Candidate :
5 2 5 3 B.Sc. DEGREE EXAMINATION, 2008
(ELECTRONIC SCIENCE)
(SECOND YEAR)
(PART - III)
( GROUP -A-MAIN)
(PAPER - III)
640. MATERIAL PHYSICS AND SEMICONDUCTOR DEVICES
(Including Lateral Entry )
December ] [ Time : 3 Hours
Maximum : 100 Marks
PART - A (5 x 4 = 20)
Answer any FIVE questions All questions carry equal marks.
1. Explain recombination and trapping process.
2. Discuss the properties of n - type and p- type semiconductors. Turn oyer
3. Write a note on thermistor and its application.
4. Sketch the input characteristics of a transistor operating in the CE modes and explain the nature of the curves.
5. Explain static characteristics of MOSFET.
6. Define the terms for FET:
(a) Shorted-gate drain current.
(b) Pinch-off voltage.
and (c) Gate-source cut - off voltage.
7. Write short notes on photo - transistor.
8. Plot the characteristic curve of tunnel diode and also explain it.
Answer any FIVE questions All questions carry equal marks.
9. (a) Explain the band formation in metals,
semiconductors and insulators.
(b) Explain Hall effect and mobility.
10. (a) Define the terms:
(i) Depletion region.
(ii) Barrier potential.
(iii) Break-down voltage.
(b) What are Vanderwaals forces ?
11. Discuss the V -1 characteristics and its nature of a junction diode.
12. Explain the input and output characteristics of CB configuration.
13. Describe the classification and fabrication of JFET.
14. Explain common - drain FET amplifier with a neat diagram.
15. Explain the construction and working of SCR.
16. Explain the construction and working and application of a Laser diode.
|
Attachment: |
| Earning: Approval pending. |
